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rf & protection devices data sheet revision 2.0, 2015-03-13 BFP640F low noise silicon germanium bipolar rf transistor
edition 2015-03-13 published by infineon technologies ag 81726 munich, germany ? 2015 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BFP640F data sheet 3 revision 2.0, 2015-03-13 trademarks of infineon technologies ag aurix?, c166?, canpak?, ci pos?, cipurse?, econopac k?, coolmos?, coolset?, corecontrol?, crossav e?, dave?, di-pol?, easypim?, econobridge?, econodual?, econopim?, econopack?, eicedriver?, eupec?, fcos?, hitfet?, hybridpack?, i2rf?, isoface?, isopack?, mipaq?, modstack?, my-d?, novalithic?, optimos?, origa?, powercode?; primarion?, pr imepack?, primestack?, pr o-sil?, profet?, rasic?, reversave?, satric?, si eget?, sindrion?, sipmos?, smartl ewis?, solid flash?, tempfet?, thinq!?, trenchstop?, tricore?. other trademarks advance design system? (ads) of agilent te chnologies, amba?, arm?, multi-ice?, keil?, primecell?, realview?, thumb?, vision? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus?, firstgps? of trimble navigation ltd. emv? of emvc o, llc (visa holdings in c.). epcos? of epcos ag. flexgo? of microsoft corp oration. flexray? is licensed by flexray consortium. hyperterminal? of hilgraeve incorporated. iec? of commission electrot echnique internationale. irda? of infrared data association corporation. iso? of international organization for standardization. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. microtec?, nucleus? of mentor graphics corporation. mipi? of mipi allianc e, inc. mips? of mips technologies, inc., u sa. murata? of murata manufacturing co., microwave office? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. openwave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of si rius satellite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of symbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. tektro nix? of tektronix inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilo g?, palladium? of cadence design systems, inc. vlynq? of texas instruments incorpor ated. vxworks?, wind river? of wind ri ver systems, inc. zetex? of diodes zetex limited. last trademarks update 2011-11-11 BFP640F, low noise silicon ge rmanium bipolar rf transistor revision history: 2015-03-13, revision 2.0 page subjects (major cha nges since last revision) this data sheet replaces the revision from 2007-05-31 . the reason for the new revision is to increase the information content for the circuit designer. the performance parameters are now enlisted in a table containing many re levant application frequencies. the measurements of typical devices have been repeated and the device description has been expanded by adding several new characteristic curves. for customers who bought the product pr ior to the issue of t he new revision the old specifications remain valid.
BFP640F table of contents data sheet 4 revision 2.0, 2015-03-13 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 list of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 list of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1product brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.1 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.2 general ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.3 frequency dependent ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.4 characteristic dc diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5.5 characteristic ac diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 simulation data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 7 package information tsfp-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 table of contents
BFP640F list of figures data sheet 5 revision 2.0, 2015-03-13 figure 4-1 total power dissipation p tot = f ( t s ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 figure 5-1 BFP640F testing circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 5-2 collector current vs . collector emitter voltage i c = f ( v ce ), i b = parameter in a . . . . . . . . . . . . . 16 figure 5-3 dc current gain h fe = f ( i c ), v ce = 3 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 5-4 collector current vs. base emitter forward voltage i c = f ( v be ), v ce = 2 v . . . . . . . . . . . . . . . . . 17 figure 5-5 base current vs. base emitter forward voltage i b = f ( v be ), v ce = 2 v . . . . . . . . . . . . . . . . . . . . 17 figure 5-6 base current vs. base emitter reverse voltage i b = f ( v eb ), v ce = 2 v . . . . . . . . . . . . . . . . . . . . 18 figure 5-7 transition frequency f t = f ( i c ), f = 1 ghz, v ce = parameter in v . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 5-8 3rd order intercept point at output oip3 = f ( i c ), z s = z l =50 ? , parameters: v ce in v, f in mhz 19 figure 5-9 3rd order intercept point at output oip3 [dbm] = f ( i c, v ce ), z s = z l = 50 ? , f = 2.4 ghz . . . . . . 20 figure 5-10 compression point at output op 1db [dbm] = f ( i c, v ce ), z s = z l = 50 ? , f = 2.4 ghz . . . . . . . . . . 20 figure 5-11 collector base capacitance c cb = f ( v cb ), f = 1 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 5-12 gain g ma, g ms, | s 21 | 2 = f ( f ), v ce = 3 v, i c = 25 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 5-13 maximum power gain g max = f ( i c ), v ce = 3 v, f = parameter in ghz . . . . . . . . . . . . . . . . . . . . . . 22 figure 5-14 maximum power gain g max = f ( v ce ), i c = 25 ma, f = parameter in ghz . . . . . . . . . . . . . . . . . . . 22 figure 5-15 input matching s 11 = f ( f ), v ce = 3 v, i c = 6 / 25 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 figure 5-16 source impedance for minimum noise figure z opt = f ( f ), v ce = 3 v, i c = 6 / 25 ma . . . . . . . . . . . 23 figure 5-17 output matching s 22 = f ( f ), v ce = 3 v, i c = 6 / 25 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 figure 5-18 noise figure nf min = f ( f ), v ce = 3 v, i c = 6 / 25 ma, z s = z opt . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 figure 5-19 noise figure nf min = f ( i c ), v ce = 3 v, z s = z opt , f = parameter in ghz . . . . . . . . . . . . . . . . . . . . . 25 figure 5-20 noise figure nf 50 = f ( i c ), v ce = 3 v, z s = 50 ? , f = parameter in ghz . . . . . . . . . . . . . . . . . . . . 25 figure 7-1 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 7-2 package footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 7-3 marking description (marking bfp 640f: r4s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 7-4 tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 list of figures
BFP640F list of tables data sheet 6 revision 2.0, 2015-03-13 table 3-1 maximum ratings at t a = 25 c (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 4-1 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 5-1 dc characteristics at t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 5-2 general ac characteristics at t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 5-3 ac characteristics, v ce =3v, f = 0.45 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 5-4 ac characteristics, v ce =3v, f = 0.9 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 5-5 ac characteristics, v ce =3v, f = 1.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 5-6 ac characteristics, v ce =3v, f = 1.9 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 5-7 ac characteristics, v ce =3v, f = 2.4 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 5-8 ac characteristics, v ce =3v, f = 3.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 5-9 ac characteristics, v ce =3v, f = 5.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 list of tables
BFP640F product brief data sheet 7 revision 2.0, 2015-03-13 1 product brief the BFP640F is linear very low noise wideband npn bipolar rf transistor. the device is based on infineon?s reliable high volume silicon germaniu m carbon (sige:c) heteroj unction bipolar technolo gy. the collector design supports voltages up to v ce = 4.1 v and currents up to i c = 50 ma. with its high linearity at currents as low as 10 ma (see fig. 5-8) the device support s energy efficient designs. the typical transition frequency is approximately 40 ghz, hence the device offers high power gain at freq uencies up to 8 ghz in amplifier applications. the device is housed in a thin small flat plastic package with visible leads.
BFP640F features data sheet 8 revision 2.0, 2015-03-13 2 features applications as low noise amplifier (lna) in ? satellite communication systems: navigation systems (gps, glonass), satellite radio (sdars, dab) and c-band lnb ? mobile, portable and fixed connectivity applications: wlan 802.11a/b/g/n/ac, wim ax 2.5/3.5/5.5 ghz, uwb, bluetooth ? multimedia applications such as mobile/portable tv, catv, fm radio ? 3g/4g umts/lte mobile phone applications ? ism applications like rke, am r and zigbee, as well as for emerging wireless applications as discrete active mixer, amplif ier in vcos and buffer amplifier attention: esd (electrostatic discharge) sensitive device, observe handling precautions ? linear low noise amplifier based on infineons reliable, high volume sige:c technology ? high linearity oip3 = 27.5 dbm @ 5.5 ghz, 3 v, 25 ma ? high transition frequency f t = 42 ghz @ 3 v, 30 ma ? nf min = 0.75 db @ 3.5 ghz, 3 v, 6 ma ? maximum power gain gma = 16.5 db @ 3.5 ghz, 3 v, 25 ma ? low power consumption, ideal for mobile applications ? very common as gps low noise amplifier, see respective application notes on infineon internet page ? easy to use pb-free (rohs compliant) and halogen-free standard package with visible leads ? qualification report according to aec-q101 available product name package pin configuration marking BFP640F tsfp-4-1 1 = b 2 = e 3 = c 4 = e r4s
BFP640F maximum ratings data sheet 9 revision 2.0, 2015-03-13 3 maximum ratings attention: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. table 3-1 maximum ratings at t a = 25 c (unless otherwise specified) parameter symbol values unit note / test condition min. max. collector emitter voltage v ceo ? ? 4.1 3.6 v open base t a = 25 c t a = -55 c collector emitter voltage v ces ? 13 v e-b short circuited collector base voltage v cbo ? 13 v open emitter emitter base voltage v ebo ? 1.2 v open collector collector current i c ?50 ma? base current i b ?3 ma? total power dissipation 1) 1) t s is the soldering point temperature. t s is measured on the emitter lead at the soldering point of the pcb. p tot ?200mw t s 92 c junction temperature t j ?150c? storage temperature t stg -55 150 c ?
BFP640F thermal characteristics data sheet 10 revision 2.0, 2015-03-13 4 thermal characteristics figure 4-1 total power dissipation p tot = f ( t s ) table 4-1 thermal resistance parameter symbol values unit note / test condition min. typ. max. junction - soldering point 1) 1) for the definition of r thjs please refer to application note an077 (thermal resistance calculation) r thjs ??290k/w? 0 25 50 75 100 125 150 0 40 80 120 160 200 240 t s [c] p tot [mw]
BFP640F electrical characteristics data sheet 11 revision 2.0, 2015-03-13 5 electrical characteristics 5.1 dc characteristics 5.2 general ac characteristics table 5-1 dc characteristics at t a = 25 c parameter symbol values unit note / test condition min. typ. max. collector emitter breakdown voltage v (br)ceo 4.1 4.7 ? v i c =1ma, i b =0 open base collector emitter leakage current i ces ?1 1 400 1) 40 1) 1) maximum values not limited by the device but by the sh ort cycle time of the 100% test na v ce =13 v, v be =0 v ce =5 v, v be =0 e-b short circuited collector base leakage current i cbo ?140 1) na v cb =5v, i e =0 open emitter emitter base leakage current i ebo ?140 1) na v eb =0.5v, i c =0 open collector dc current gain h fe 110 180 270 v ce =3v, i c = 30 ma pulse measured table 5-2 general ac characteristics at t a = 25 c parameter symbol values unit note / test condition min. typ. max. transition frequency f t ?42?ghz v ce =3v, i c =30ma f =1 ghz collector base capacitance c cb ?0.09?pf v cb =3v, v be =0 f =1mhz emitter grounded collector emitte r capacitance c ce ?0.2?pf v ce =3v, v be =0 f =1mhz base grounded emitter base capacitance c eb ?0.47?pf v eb =0.5v, v cb =0 f =1mhz collector grounded
BFP640F electrical characteristics data sheet 12 revision 2.0, 2015-03-13 5.3 frequency dependent ac characteristics measurement setup is a test fixture with bias ts in a 50 ? system, t a =25c figure 5-1 BFP640F testing circuit out in bias -t bias-t b (pin 1) e c e vc top view vb
BFP640F electrical characteristics data sheet 13 revision 2.0, 2015-03-13 table 5-3 ac characteristics, v ce =3v, f =0.45ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 33 31 ? ? db i c =25ma i c =25ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 0.55 26 ? ? db i c =6ma i c =6ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 10.5 23.5 ? ? dbm z s = z l =50 ? i c =25ma i c =25ma table 5-4 ac characteristics, v ce =3v, f =0.9ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 28.5 26.5 ? ? db i c =25ma i c =25ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 0.55 23.5 ? ? db i c =6ma i c =6ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 12.5 26 ? ? dbm z s = z l =50 ? i c =25ma i c =25ma table 5-5 ac characteristics, v ce =3v, f =1.5ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 25 22.5 ? ? db i c =25ma i c =25ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 0.6 20.5 ? ? db i c =6ma i c =6ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 12 26 ? ? dbm z s = z l =50 ? i c =25ma i c =25ma
BFP640F electrical characteristics data sheet 14 revision 2.0, 2015-03-13 table 5-6 ac characteristics, v ce =3v, f =1.9ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 23 20.5 ? ? db i c =25ma i c =25ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 0.6 19 ? ? db i c =6ma i c =6ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 12.5 27 ? ? dbm z s = z l =50 ? i c =25ma i c =25ma table 5-7 ac characteristics, v ce =3v, f =2.4ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ma | s 21 | 2 ? ? 20 18.5 ? ? db i c =25ma i c =25ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 0.65 17 ? ? db i c =6ma i c =6ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 12.5 28 ? ? dbm z s = z l =50 ? i c =25ma i c =25ma table 5-8 ac characteristics, v ce =3v, f =3.5ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ma | s 21 | 2 ? ? 16.5 15.5 ? ? db i c =25ma i c =25ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 0.75 14 ? ? db i c =6ma i c =6ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 12 27.5 ? ? dbm z s = z l =50 ? i c =25ma i c =25ma
BFP640F electrical characteristics data sheet 15 revision 2.0, 2015-03-13 note: oip3 value depends on termination of all intermodulatio n frequency components. termination used for this measurement is 50 ? from 0.2 mhz to 12 ghz. table 5-9 ac characteristics, v ce =3v, f =5.5ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ma | s 21 | 2 ? ? 12.5 11.5 ? ? db i c =25ma i c =25ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 1.0 11 ? ? db i c =6ma i c =6ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 12.5 27.5 ? ? dbm z s = z l =50 ? i c =25ma i c =25ma
BFP640F electrical characteristics data sheet 16 revision 2.0, 2015-03-13 5.4 characteristic dc diagrams figure 5-2 collector current vs . collector emitter voltage i c = f ( v ce ), i b = parameter in a figure 5-3 dc current gain h fe = f ( i c ), v ce =3v 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 20 25 30 v ce [v] i c [ma] 20a 40a 60a 80a 100a 120a 140a 160a 10 0 10 1 10 2 10 2 10 3 i c [ma] h fe
BFP640F electrical characteristics data sheet 17 revision 2.0, 2015-03-13 figure 5-4 collector current vs. base emitter forward voltage i c = f ( v be ), v ce =2v figure 5-5 base current vs. base emitter forward voltage i b = f ( v be ), v ce =2v 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 10 ?4 10 ?3 10 ?2 10 ?1 10 0 10 1 10 2 v be [v] i c [ma] 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 10 ?7 10 ?6 10 ?5 10 ?4 10 ?3 10 ?2 10 ?1 10 0 v be [v] i b [ma]
BFP640F electrical characteristics data sheet 18 revision 2.0, 2015-03-13 figure 5-6 base current vs. base emitter reverse voltage i b = f ( v eb ), v ce =2v 0.6 0.7 0.8 0.9 1 1.1 1.2 10 ?13 10 ?12 10 ?11 10 ?10 10 ?9 v eb [v] i b [a]
BFP640F electrical characteristics data sheet 19 revision 2.0, 2015-03-13 5.5 characteristic ac diagrams measurement setup is a test fixture with bias ts in a 50 ? system, t a =25c. figure 5-7 transition frequency f t = f ( i c ), f = 1 ghz, v ce = parameter in v figure 5-8 3rd order intercept point at output oip3 = f ( i c ), z s = z l =50 ? , parameters: v ce in v, f in mhz 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 45 ic [ma] ft [ghz] 4.00v 3.00v 2.50v 2.00v 1.50v 1.00v 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 i c [ma] oip 3 [dbm] 2v, 1500mhz 3v, 1500mhz 2v, 2400mhz 3v, 2400mhz
BFP640F electrical characteristics data sheet 20 revision 2.0, 2015-03-13 figure 5-9 3rd order intercept point at output oip3 [dbm] = f ( i c, v ce ), z s = z l = 50 ? , f = 2.4 ghz figure 5-10 compression point at output op 1db [dbm] = f ( i c, v ce ), z s = z l = 50 ? , f = 2.4 ghz 8 9 1 0 1 1 1 2 13 14 15 16 17 17 18 18 18 19 19 19 19 20 20 20 20 20 21 21 21 21 21 22 22 22 22 22 23 23 23 23 2 3 24 24 24 24 25 25 25 25 2 6 26 26 26 27 27 27 28 28 29 v ce [v] i c [ma] 1 1.5 2 2.5 3 3.5 4 5 10 15 20 25 30 ?2 ?1 ?1 ?1 0 0 0 0 1 1 1 1 2 2 2 2 3 3 3 3 3 4 4 4 4 4 5 5 5 5 5 6 6 6 6 6 7 7 7 7 7 8 8 8 8 9 9 9 9 10 10 10 10 11 11 11 12 12 13 v ce [v] i c [ma] 1 1.5 2 2.5 3 3.5 4 5 10 15 20 25 30
BFP640F electrical characteristics data sheet 21 revision 2.0, 2015-03-13 figure 5-11 collector base capacitance c cb = f ( v cb ), f =1 mhz figure 5-12 gain g ma, g ms, | s 21 | 2 = f ( f ), v ce = 3 v, i c = 25 ma 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.04 0.08 0.12 0.16 0.2 v cb [v] c cb [pf] 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 f [ghz] g [db] g ms g ma |s 21 | 2
BFP640F electrical characteristics data sheet 22 revision 2.0, 2015-03-13 figure 5-13 maximum power gain g max = f ( i c ), v ce = 3 v, f = parameter in ghz figure 5-14 maximum power gain g max = f ( v ce ), i c = 25 ma, f = parameter in ghz 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 45 i c [ma] g [db] 5.50ghz 3.50ghz 2.40ghz 1.90ghz 1.50ghz 0.90ghz 0.45ghz 0.15ghz 10.00ghz 0 1 2 3 4 5 0 5 10 15 20 25 30 35 40 10.00ghz 5.50ghz 3.50ghz 2.40ghz 1.90ghz 1.50ghz 0.90ghz 0.45ghz 0.15ghz v ce [v] g [db]
BFP640F electrical characteristics data sheet 23 revision 2.0, 2015-03-13 figure 5-15 input matching s 11 = f ( f ), v ce = 3 v, i c = 6 / 25 ma figure 5-16 source impedance for minimum noise figure z opt = f ( f ), v ce = 3 v, i c = 6 / 25 ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.03 1.0 0.03 to 6 ghz 1.0 2.0 3.0 4.0 5.0 6.0 2.0 3.0 4.0 5.0 6.0 0.03 6.0ma 25ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 8.0 0.45 0.9 1.5 1.9 2.4 3.5 5.5 8.0 10.0 0.45 1.5 2.4 3.5 5.5 10.0 0.45 to 10 ghz 6ma 25ma
BFP640F electrical characteristics data sheet 24 revision 2.0, 2015-03-13 figure 5-17 output matching s 22 = f ( f ), v ce = 3 v, i c = 6 / 25 ma figure 5-18 noise figure nf min = f ( f ), v ce = 3 v, i c = 6 / 25 ma, z s = z opt 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.03 to 6 ghz 1.0 2.0 3.0 4.0 5.0 6.0 0.03 1.0 2.0 3.0 4.0 5.0 6.0 0.03 6.0ma 25ma 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 f [ghz] nf min [db] i c = 6.0ma i c = 25ma
BFP640F electrical characteristics data sheet 25 revision 2.0, 2015-03-13 figure 5-19 noise figure nf min = f ( i c ), v ce = 3 v, z s = z opt , f = parameter in ghz figure 5-20 noise figure nf 50 = f ( i c ), v ce = 3 v, z s = 50 ? , f = parameter in ghz note: the curves shown in this chapter have been generate d using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. 0 5 10 15 20 25 30 35 40 0 0.5 1 1.5 2 2.5 3 i c [ma] nf min [db] f = 0.45ghz f = 0.9ghz f = 1.5ghz f = 1.9ghz f = 2.4ghz f = 3.5ghz f = 5.5ghz f = 10ghz 0 5 10 15 20 25 30 35 40 0 0.5 1 1.5 2 2.5 3 3.5 4 i c [ma] nf 50 [db] f = 0.45ghz f = 0.9ghz f = 1.5ghz f = 1.9ghz f = 2.4ghz f = 3.5ghz f = 5.5ghz f = 10ghz
BFP640F simulation data data sheet 26 revision 2.0, 2015-03-13 6 simulation data for the spice gummel poon (gp) model as well as fo r the s-parameters (including noise parameters) please refer to our internet website. please consult our website and download the latest versions before actually starting your design. you find the BFP640F spice gp model in the internet in mwo- and ads-format, which you can import into these circuit simulation tools very quickly and conveniently. the model already co ntains the package parasitics and is ready to use for dc and high frequency simulations. the terminals of the model circ uit correspond to the pin configuration of the device. the model parameters have been extracted and verified up to 6 ghz using typical devices. the BFP640F spice gp model reflects the typical dc- and rf-performance within the limitations which are given by the spice gp model itself. besides the dc characte ristics all s-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted.
BFP640F package information tsfp-4-1 data sheet 27 revision 2.0, 2015-03-13 7 package information tsfp-4-1 figure 7-1 package outline figure 7-2 package footprint figure 7-3 marking description (marking BFP640F: r4s) figure 7-4 tape dimensions 10 max. 0.05 0.2 0.05 1.4 12 0.05 0.8 1.2 0.05 0.04 0.55 0.05 0.2 0.05 0.15 0.05 0.2 0.5 0.05 0.5 0.05 43 tsfp-4-1, -2-po v04 0.35 0.45 0.9 0.5 0.5 tsfp-4-1, -2-fp v04 tsfp-4-1, -2-tp v05 4 0.2 1.4 8 pin 1 1.55 0.7
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